III-nitride optoelectronic device
US6605485B2 · kind B2 · utility
1Cited by
7References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 16, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | May 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1−xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.