Silicon controlled rectifier ESD structures with trench isolation
US6605493B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2001 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Aug 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates polysilicon gates bridging SCR diode junction elements and also bridging between SCR elements and neighboring STI structures. The presence of the strategically located polysilicon gates effectively counters the detrimental effects of non-planar STI “pull down” regions as well as compensating for the interaction of silicide structures and the effective junction depth of diode elements bounded by STI elements. Connecting the gates to appropriate voltage sources such as the SCR anode input voltage and the SCR cathode voltage, typically ground, reduces normal operation leakage of the ESD protection device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.