Reduced area intersection between electrode and programming element
US6605527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2001 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Jun 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.