Ruthenium complex, process for producing the same and process for producing thin film
US6605735B2 · kind B2 · utility
55Cited by
10References
26Claims
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Key dates
| Filing date | Sep 9, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Sep 9, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentadienyl)ruthenium: or an organometallic ruthenium compound represented by the general formula (7), specific example of which is carbonylbis(2-methyl-1,3-pentadiene)ruthenium: as the precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.