Solid-state image pickup device using layers having different refractive indices
US6605850B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2000 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Nov 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.