Schottky diode with bump electrodes
US6605854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Jan 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p−-type conductive type, after a hyper-abrupt p+n+ junction of a p+-type diffusion layer, an n+-type hyper-abrupt layer, an n−-epitaxial layer, an n-type low resistance layer and an n+-type diffusion layer is formed, an anode electrode is formed on the top of the p+-type diffusion layer and a cathode electrode is formed on the top of the n+-type diffusion layer. Thereafter, electrode bumps are formed on the top of the anode electrode and the cathode electrode to thereby manufacture a small diode that can be facedown bonded onto a mounting board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.