Buried Zener diode structure and method of manufacture
US6605859B1 · kind B1 · utility
7Cited by
14References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
Abstract
A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.