Temperature controlled wafer chuck system with low thermal resistance
US6605955B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2000 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Jan 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A temperature-controlled semiconductor wafer chuck system, the chuck being configured for mounting on a prober stage of a wafer probe test station. The chuck having a top surface and a bottom surface including a heat sink configuration for removal of thermal energy from the chuck. A primary heater configured to add heat to the chuck is adjacent the top surface of the chuck. A secondary heater is adjacent to the bottom of the chuck, whereby the temperature of the top surface of the chuck and the bottom of the chuck can be independently controlled. The chuck may include a plurality of layers above the heat sink which may be connected to accommodate differential expansion and contraction, thereby minimizing distortion of the chuck due to thermal effects. The heat sink and associated layers are integrally connected and are configured to stiffen the chuck to resist deformation due to forces applied to the chuck by probe pins. Still further, the chuck has cooling channels closer to the top surface than the heater and is disclosed to reduce the thermal resistance of the chuck. Furthermore, a chuck with a heater having double walled construction is disclosed whereby the inner wall is groun…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.