Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
US6607836B2 · kind B2 · utility
8Cited by
7References
75Claims
0Family size
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Key dates
| Filing date | Oct 18, 2001 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Oct 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A material with a low volume resistivity at room temperature composed of an aluminum nitride sintered body is provided. The sintered body contains samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent. The sintered body contains an aluminum nitride phase and a samarium-aluminum complex oxide phase. The samarium-aluminum complex oxide phase forms intergranular layers with a low resistivity along the intergranular phase between aluminum nitride grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.