Semiconductor device and method of producing the same
US6607979B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 27, 2000 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Sep 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of the present invention includes a conductive film made up of a polysilicon film, a barrier metal film and a high melting point, metal nitride film sequentially laminated in this order. The conductive film is annealed to lower the resistance of the metal nitride film. Annealing causes the metal nitride film, which is formed in an amorphous state, to release nitrogen and increases the crystal size of metal having a high melting point. This successfully improves the crystallization of the high melting point metal and lowers the resistance of the metal nitride film without regard to the crystallization of the underlying barrier metal film. It is therefore possible to improve the crystallization of the metal nitride film or to obviate the step of providing the barrier metal film with a double-layer structure, i.e., to simplify the production procedure. A method of producing the semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.