Method for forming a Cu interconnect pattern
US6607981B1 · kind B1 · utility
8Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Sep 7, 2000 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Apr 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/184
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a Cu interconnect pattern on a ZnO film of a printed circuit board without using a metallic catalyst on the ZnO film includes the steps of replacing Zn in the ZnO film by Cu in an aqueous solution of copper sulfate to form a CuO film, reducing the CuO in the CuO film to Cu in an aqueous solution of hydrogenated boron potassium to form a metallic Cu film, and plating the metallic Cu film with a plating Cu film in a plating liquid. The absence of the metallic catalyst improves the insulation resistance of the Cu interconnect pattern in the printed circuit board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.