Antireflection coating and semiconductor device manufacturing method
US6607992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2001 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Nov 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31982
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antireflection coating has two-layer structure including lower and upper silicon nitride films (p-SiN films) formed by plasma CVD. For the lower p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.9 nor more than 2.5, the imaginary part is set in the range of not less than 0.9 nor more than 1.7, and the film thickness is set in the range of not less than 20 nm nor more than 60 nm. For the upper p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.7 nor more than 2.4, the imaginary part is set in the range of not less than 0.15 nor more than 0.75, and the film thickness is set in the range of not less than 10 nm nor more than 40 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.