Multiple source deposition process
US6610352B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Jun 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B3/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for the deposition of a thin film of a pre-determined composition e.g. a phosphor, onto a substrate, in which the composition is a ternary, quaternary or higher composition, especially a composition selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. In the embodiment, the method comprises placing a pellet of at least one sulfide on a first source and placing a pellet of at least one sulfide on a second source, with one pellet containing dopant. Vapor deposition onto the substrate is effected with separate electron beams. The rate of vaporizing of the sulfides is monitored with separate shielded coating rate monitors. The temperature of the sources is controlled to obtain the composition on the substrate. The method is particularly used for deposition of ternary or quaternary phosphors on substantially opaque substrates in electroluminescent devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.