Multi-layer assemblies with predetermined stress profile and method for producing same
US6610361B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1999 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Nov 26, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.