Semiconductor device having a high-dielectric capacitor
US6610579B2 · kind B2 · utility
1Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Apr 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.