Field-assisted fusion bonding
US6610582B1 · kind B1 · utility
33Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 2002 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Mar 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of field-assisted fusion bonding produces multiple-layer devices. Contacts (301, 303, 305, 307, 309) are placed at various points along different surfaces of a combination of two or more wafers (201, 203, 205, 501, 503, 505, 801, 803). An electric field is applied to the contacts (301, 303, 305, 307, 309), thereby creating an electrostatic attractive force between the wafers (201, 203, 205, 501, 503, 505, 801, 803). The temperature of the wafer combination is elevated to a fusion bonding temperature while the electric field is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.