Semiconductor light emitting device and method of manufacturing the same
US6610589B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 2002 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Jun 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor lamination including an n-type layer and a p-type layer composed of a gallium nitride based compound semiconductor and forming a light emitting region is formed on the surface of a substrate. A p-side electrode is formed through a diffusion metal layer on the surface of the semiconductor lamination. Also, an n-side electrode is formed on the n-type layer exposed by etching off a part of the semiconductor lamination. The n-side electrode is formed of an ohmic contact electrode and a bonding electrode. The bonding electrode is formed in such a manner as to cover the surface and the sides of the ohmic contact electrode. As a result, a semiconductor light emitting device made of a gallium nitride based compound semiconductor is produced having an electrode structure of a superior ohmic contact characteristic and a superior wire bonding characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.