Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich III-V material system
US6610612B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 12, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Dec 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating layers of an aluminum-bearing III-V compound semiconductor material and a second III-V semiconductor material where N≧2, at least one phosphorous-rich III-V semiconductor layer, and at least one substantially phosphorous-free III-V semiconductor layer between each of the at least one phosphorous-rich layers and the SSL. The III-V semiconductor system is exposed to oxidizing atmosphere to selectively oxidize at least a portion of the SSL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.