Apparatus and method of ion beam processing
US6610987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2002 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Feb 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0041
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In order to suppress quick potential change on the surface of a process target when the shutter plate is opened and closed, when an ion beam IB from the ion source 10 is irradiated on a substrate 38 and the ion beam IB is neutralized by using neutralizing electrons e− generated by a microwave neutralizer 14, the shutter plate 62 shields the substrate 38 before and after the milling processing of the substrate 38, and the voltage of a power supply 34 is lowered when the shutter plate 62 is opened and closed so as to limit the amount of ion beam IB irradiation, thereby suppressing charge-up on the surface of the substrate 38.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.