Protection transistor with improved edge structure
US6611027B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 8, 2002 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | May 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A metal-oxide-semiconductor protection transistor is formed in an active region of a semiconductor layer. The active region includes source and drain diffusion layers, which may be partly silicided, and a body region. A gate electrode extends across the active region above the body region. The breakdown voltage in the edge areas of the active regions is increased by increasing the gate length in the edge areas, by increasing the width of the active region below the gate electrode, or by increasing the non-silicided length of the source and drain diffusion layers in the edge areas. The edge areas of the active region are thereby protected from thermal damage during electrostatic discharges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.