Ferroelectric memory and method for reading the same
US6611448B2 · kind B2 · utility
24Cited by
9References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Jul 30, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory device and method for reading such a device utilize capacitive coupling between a bit line and sense amplifier. The gain depends on a capacitance ratio rather than the absolute value of a capacitor. Ratiometric gain control reduces the gain variability of a sense amplifier, thereby allowing more accurate sensing. Attenuating the signal from an active bit line eliminates the need for high voltage devices in a sense amplifier arrangement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.