Magnetic memory
US6611455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2002 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Apr 11, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1697
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A solid-state magnetic memory includes: a substrate; a plurality of memory cells arrayed in a matrix on the substrate, each memory cell including a memory element and an element-selecting device, the memory element including two magnetic layers and a nonmagnetic layer sandwiched between the magnetic layers, the easy magnetization axis of each magnetic layer being directed perpendicular to the plane of the layer; a plurality of bit lines connected to the memory elements for reading out data recorded in the memory elements; and a plurality of write lines placed substantially in the same plane so as to sandwich the memory cell columns, at least one end of each write line being joined to one end of another write line so that a current flows in opposite directions at both sides of each memory cell column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.