Non-volatile semiconductor memory device having sensitive sense amplifier structure
US6611468B2 · kind B2 · utility
6Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Aug 20, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile semiconductor memory device, a constant current circuit is arranged in parallel with an NMOS diode converting a detected current on the array cell side to a voltage, and a constant current circuit is arranged in parallel with an NMOS diode converting a detected current on the reference cell side to a voltage. Constant current circuits supply an offset current. Thus, a difference between two input voltages of a differential amplifier increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.