Soi annealing method for reducing HF defects, with lamp, without crystal original particle (COP)
US6613638B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 27, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Sep 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The HF defect density in an SOI is reduced. After annealing step (S2) of annealing an SOI at a temperature between the melting point (e.g., 993° C.) of a semiconductor metal compound (e.g., nickel silicide) formed from a metal and the semiconductor material of the crystal semiconductor of the SOI (inclusive) and the melting point of the semiconductor material (inclusive), the temperature is reduced such that the cooling rate within the temperature range from the melting point of the semiconductor metal compound and the production temperature (e.g., 775° C.) of the semiconductor metal compound becomes 0.12° C./sec or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.