Process of reclamation of SOI substrate and reproduced substrate
US6613676B1 · kind B1 · utility
11Cited by
18References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOI substrate 1 having semiconductor base plate 2 and a single crystal semiconductor layer 4 with interposition of an insulating layer 3 is prepared is reclaimed through a first removal step of removing the single crystal semiconductor layer 4, and a second removal step of removing selectively the insulation layer 3. Thereby the loss of the thickness of the base plate in the reclamation is decreased in the reproduction of the SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.