Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure
US6613678B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1999 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | May 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing a semiconductor substrate, comprising the step of preparing a first substrate which has a surface layer portion subjected to hydrogen annealing, the separation-layer formation step of implanting ions of hydrogen or the like into the first substrate from the side of the surface layer portion, thereby to form a separation layer, the adhesion step of bonding the first substrate and a second substrate to each other so that the surface layer portion may lie inside, thereby to form a multilayer structure, and the transfer step of separating the multilayer structure by utilizing the separation layer, thereby to transfer the less-defective layer of the surface layer portion onto the second substrate. The less-defective layer is a single-crystal silicon layer in which defects inherent in a bulk wafer, such as COPs and FPDs, are decreased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.