Reverse reactive ion patterning of metal oxide films
US6613687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Nov 11, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2002/14411
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
The invention provides a method for making thin film metal oxide actuator device. According to the method a first conductive layer is deposited on a silicon substrate. Next a thin film metal oxide layer is deposited on the first conductive layer. A negative photoresist material is applied to the metal oxide layer to provide a photoresist layer. The photoresist layer is patterned using light radiation energy and developed to provide one or more exposed portions of the metal oxide layer. The photoresist layer is etched with a reactive ion plasma sufficient to remove the photoresist layer and the metal oxide layer under the photoresist layer from the first conductive layer leaving the one or more exposed portions of metal oxide layer on the first conductive layer. A second conductive layer is attached to the metal oxide layer to provide a thin film metal oxide actuator device. The method may be practiced without the use of more dangerous or hazardous wet chemical etching techniques which may provide undesirable undercutting of the metal oxide layers or may leave contaminants on the patterned metal oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.