High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions
US6614081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Apr 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Metal Oxide Semiconductor (MOS) transistor includes a gate insulating film disposed on a surface of a silicon substrate. The gate insulating film has a central portion formed on the silicon substrate and comprising a nitride insulating film, and an end portion located on each side of the central portion, the end portion being thicker than the central portion and formed of an oxide insulating film. The MOS transistor also includes a p-type gate electrode formed on the gate insulating film, sidewalls formed on both sides of the gate insulating film and the gate electrode, a pair of p-type source/drain areas formed in surface portions of the silicon substrate, and a channel area located between the pair of source/drain areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.