Thin-film heat sink and method of manufacturing same
US6614107B2 · kind B2 · utility
8Cited by
2References
8Claims
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Key dates
| Filing date | Nov 15, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Nov 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film heat sink comprises a heat sink film functioning as a heat sink and a bonding film for bonding the heat sink film to a base. The bonding film is an aluminum oxide (Al2O3) film formed using the CVD method and the heat sink film is an aluminum nitride (AlN) film. For the AlN film as the heat sink film, internal stress is compressive stress, whereas for the Al2O3 film as the bonding film, internal stress is tensile stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.