Semiconductor device and method for producing the same
US6614113B2 · kind B2 · utility
18Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a barrier metal structure which are sandwiched between an electrode provided on a semiconductor chip and a bump. The barrier metal structure has a first through third conductive metal layers, where the third conductive metal layer as an uppermost layer thereof in contact with the bump covers the second conductive metal layer made of a material which is weak in resistance to diffusion and oxidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.