Solid-state excimer devices and processes for producing same

US6614178B1 · kind B1 · utility

Inventor

• Fumio Okada · Takasaki, JP

Key dates

• Filing date: Oct 20, 2000
• Grant date: Sep 2, 2003
• Expiry date: Mar 17, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/00

Abstract

Useful, new electronic devices are disclosed which utilize the huge polarization and electric double layer generated by excimer formation reaction in solid thin host films doped with excimer forming atoms (rare-gases and halogens: hereinafter, the parent atoms of excimers) at ambient temperature and pressure. A fundamental type of these devices is a single layer solid-state excimer device, which consists of a thin film fabricated by selecting a material from insulating metal oxides, at least one dopant from the parent rare-gas atoms (Ar, Kr and Xe) of excimers, and at least one dopant from parent halogen atoms (F, Cl, Br and I) of excimers. The dopants can be doped in the thin film during its fabrication process. Upper and lower electrodes can be added to the thin film when they are needed, and practical devices can be obtained by fabricating the electrodes and thin film together on a substrate.