Self-grown monopoly compact grit
US6616725B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 21, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Aug 21, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A self-grown monopoly compact grit and high pressure, high temperature process for preparing the same. The high pressure, high temperature sintered/synthesized monopoly compact grit is used in various industrial tools such as saw blades, grinding wheels, cutting tools and drill bits. Further, the monopoly compact grit of the present invention is produced from a seed of a mono-crystal of diamond or cubic boron nitride surrounded by either a self-grown crystal layer or an integrally bonded poly-crystalline sintered compact layer. The self-grown crystal layer is a new grown crystal structure where the seed crystal grows into a new phase through a normal diamond or cubic boron nitride synthesis process in the presence of a catalyst metal solvent. The compact layer is composed of about 50 to about 90 volume percent of diamond or cubic boron nitride, a typical binder material, which is a catalyst for crystal-to-crystal bonding, and a cementing agent which is a binding agent capable of forming stable carbide and nitride bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.