Method of manufacturing Group III-V compound semiconductor
US6617235B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. A first embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller by volume. A second embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1, 0≧y≧1,0≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that after etching within a reaction furnace using …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.