Organic thin film transistor with siloxane polymer interface
US6617609B2 · kind B2 · utility
41Cited by
12References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Nov 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.