Field effect transistor structure for driving inductive loads
US6617642B1 · kind B1 · utility
40Cited by
6References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2000 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Oct 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The field effect transistor of the present invention includes a body diffusion region having a source diffusion region therein. The field effect transistor further includes a metal source contact adjacent the body diffusion region and the source diffusion region. The metal source contact forms a Schottky type contact with the body diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.