Semiconductor device and method of manufacturing the same
US6617644B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1999 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Nov 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
Abstract
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.