EDMOS device having a lattice type drift region
US6617656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.