Post-formation feature optimization
US6619855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2002 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/3839
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves treating the wall with a reactive gas, by exposing the wall to the reactive gas, to cause the wall to become a cladding material and expand outwards from the wall in a defined, uniform manner until a desired size for the feature is achieved. An alternative method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves depositing a base material on at least part of the wall to facilitate plating of a material on the wall, on top of the base material, in a defined, uniform manner, and plating the at least part of the wall with the material until a desired size for the feature is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.