Hillock-free aluminum wiring layer and method of forming the same
US6620527B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2002 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jan 15, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24992
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A hillock-free wiring layer and method of forming the same are provided. The wiring layer includes at least two aluminum (Al) layers formed on a substrate, and each of the Al layers includes Al crystal particles. For any two Al layers of the wring layer, the one closer to the substrate is called the lower layer and the other one is called the higher layer. Besides, the Al crystal particles of the higher Al layer are larger and denser than that of the lower Al layer, and the lower Al layer has a higher resistance than that of the higher Al layer. By the invention, a wiring layer using either pure Al or an Al-based alloy is capable of preventing the occurrence of hillocks and reducing manufacturing cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.