Etching substrate material, etching process, and article obtained by etching
US6620554B1 · kind B1 · utility
9Cited by
9References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 12, 1998 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Nov 12, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12993
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process of forming a high-definition pattern by etching is provided. A photosensitive resin layer is formed on a metal substrate material having a center line-average surface roughness Ra of up to 0.10 &mgr;m and a maximum surface roughness Rmax of up to 1.0 &mgr;m to form a resist pattern. Then, the photosensitive resin layer provided on the metal substrate material is exposed to light to form a resist pattern. Finally, etching is carried out to form a pattern on the metal substrate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.