Method of fabricating low stress semiconductor devices with thermal oxide isolation
US6620704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A portion of the silicon nitrite film and the silicon oxide film may be removed at a desired portion. Additionally, a groove may be formed in the semiconductor substrate in the portion in which the silicon oxide film is removed. A part of the silicon oxide film may be etched back around the groove with hydrofluoric acid type at the portion in which the silicon nitrite film is located above. Additionally, an oxidized film may be formed in the groove of the semiconductor substrate and the groove may be oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.