Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications
US6620712B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Feb 9, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0136
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention discloses an electro-optical device support on a substrate. The electro-optical device includes a sacrificial layer disposed on the substrate having a chamber-wall region surrounding and defining an optical chamber. The electro-optical device further includes a membrane layer disposed on top of the sacrificial layer having a chamber-removal opening surrounding and defining an electric tunable membrane for transmitting an optical signal therethrough. The electrically tunable membrane disposed on top of the optical chamber surrounded by the chamber wall regions. The chamber-wall region is doped with ion-dopants for maintaining the chamber-wall region for removal-resistance under a chamber-forming process performed through the chamber-removal opening. In a preferred embodiment, the chamber-wall region is a doped silicon dioxide region with carbon or nitrogen. In another preferred embodiment, the chamber-wall region is a nitrogen ion-doped SiNxOy region. In another preferred embodiment, the optical chamber is an etched chamber formed by etching through the chamber removal opening for etching off an etch-enhanced region surrounded by an etch-resistant region consti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.