Semiconductor device and the process of manufacturing the semiconductor device
US6621108B2 · kind B2 · utility
9Cited by
7References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
Disclosed herein is a semiconductor device wherein a thyristor protective element and a trigger element are provided in a semiconductor layer formed on a buried insulating layer, and a trigger electrode (gate) of the thyristor protective element and a back gate of the trigger element are provided in the same p well and electrically connected to each other to thereby drive the thyristor protective element based on a substrate current produced by the breakdown of the trigger element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.