Method for fabricating a tunable, 3-dimensional solenoid and device fabricated
US6621139B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
Abstract
A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.