Nonvolatile memory
US6624026B1 · kind B1 · utility
10Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Mar 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6892
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A pair of sources for a pair of cells on adjacent word lines each acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor of one cell operates as a charge injector for the other cell. The charge injector provides carriers for substrate hot carrier injection onto a floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.