Method for manufacturing semiconductor device having trench filled with polysilicon
US6624044B2 · kind B2 · utility
4Cited by
14References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | May 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
First, a trench of a semiconductor substrate is filled with a polysilicon film deposited on the surface of the semiconductor substrate. A selective thin film having etching selectivity with respect to the polysilicon film is formed on the polysilicon film. Then, the selective thin film is etched (etched back) so that a part of the selective thin film remains in a depression of the polysilicon film, as a self-aligning mask. The polysilicon film is further etched with the self-aligning mask, thereby forming a polysilicon embedded layer in the trench with a flat surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.