Method for manufacturing infrared ray sensor
US6624384B2 · kind B2 · utility
4Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Oct 31, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Oct 31, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In an infrared ray sensor for a bolometer, a bridge structure body, a resistive element film for the bolometer, and a protection film is formed via a space on a substrate, and is formed into a solution form by dissolving metal organic compound into solvent. The solution is applied and dried. A laser ray is irradiated for the solution with wavelength of 400 nm or less. A bond between carbon and oxygen is decomposed and cut to thereby form an oxide thin-film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.