Semiconductor detector for thermal neutrons based on pyrolytic boron nitride
US6624423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2002 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Jan 26, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T3/08
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A pBN neutron detector and method of forming a pBN neutron detector with the neutron detector formed by depositing multiple layers of pBN having a crystalline lattice structure with its crystallographic ‘c plane’ predominantly parallel to the deposited layers. The neutron detector forms a geometry having two opposite sides aligned parallel to the ‘ab planes’ of the structure and has a thickness of between one micron and one mm between the opposite sides. Metallized contacts are applied to the opposite sides and the detector is oriented relative to a source of neutrons such that the neutrons pass through the volume of the detector and cause electrons to flow in response to alpha particles generated from the interaction of neutrons with the Boron-10 isotope present in pBN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.