Three terminal edge illuminated epilayer waveguide phototransistor

US6624449B1 · kind B1 · utility

Inventors

• David Scott · Concord, US
• Timothy A. Vang · San Dimas, US
• Srinath Kalluri · Aliso Viejo, US

Key dates

• Filing date: Jul 17, 2001
• Grant date: Sep 23, 2003
• Expiry date: Jul 17, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

A three terminal edge illuminated epilayer waveguide phototransistor including a subcollector layer formed of an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region, including a heavily doped InGaAs base layer and a very thin undoped InGaAs spacer layer, is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light.