Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET

US6624452B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Edward T. Yu · San Diego, US
• Peter M. Asbeck · San Diego, US
• Silvanus Lau · Pasadena, US
• Xiaozhong Dang · Fremont, US

Key dates

• Filing date: Jul 30, 2001
• Grant date: Sep 23, 2003
• Expiry date: Jul 30, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A GaN-based HFET includes a set of layers all having a common face polarity, i.e., all being either Ga-face or N-face. One of the layers is a thin barrier layer having a first face with a positive charge and a second face with a negative charge thereby causing a potential change to occur between the two faces. The if potential change causes the barrier layer to prevent electron flow from a channel layer into a buffer layer. The GaN-based HFET may also be fabricated without a top barrier layer to obtain an inverted GaN-based HFET.